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| Light Emitting Diode(InGaAlP/InGaN) KLP-34RG-X-X DIMENSIONS KLP-34RG has a high bright InGaAlP red LED and a high bright InGaN green LED. Features * Transparent epoxy Encapsulent * High Optical Output Applications * Display * Indicator * Signage Green (Zener Option) Maximum Ratings Parameter Reverse Voltage (w/o Zener) Reverse current ( w Zener) Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time 5 Sec *2 *1 [ Ta=25C ] Symbol VR IR IF IFP PD Topr. Tstg. Tsol. Ratings 5 50 30 0.1 180 -30 ~ +85 -40 ~ +105 260 Unit V mA mA A mW C C C Operating temperature *1. IFP Measured under duty 1/10 @ 1KHz Electro-Optical Characteristics Parameter Forward voltage [ Ta=25C ] Symbol VF Po Conditions IF = 20 mA IF = 20 mA R G R G R G R G R G R G Min 4.00 3.50 300 650 620 515 - Optical Output Power Iv Peak emission wavelength Doninant Wave Length Spectral half bandwidth Half angle P d IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA 1/2 Typ 2.0 3.3 5.50 5.00 350 750 630 520 20 30 120 Max 2.5 3.9 635 535 - Unit V mW mcd nm nm nm deg. Light Emitting Diode(InGaAlP/InGaN) KLP-34RG-X-X Forward current vs. Ambient temperature Forward current IF(mA), Each Chip (IF) 50 1.5 Radiant Intensity vs. Forward current Relative intensity 40 30 20 10 0 () 100 1 0.5 0 0 5 10 15 20 25 30 (IF) 35 0 20 40 60 80 Ambient temperature Ta Forward current IF Relative radiant intensity vs. Ambient temperature 1.2 Relative radiant intensity PO 1 Intensity [arb.] 10 Relative intensity vs. Wavelength GREEN RED 0.8 0.6 0.4 0.2 1 0.1 -20 0 20 40 60 80 100 () 0 450 500 550 600 650 700 750 Wave Length[nm] Ambient temperature Ta Forward current Vs. Forward voltage () 30 Radiant Pattern Angle(deg) RED GREEN Forward current IF + 60 25 20 15 10 + 40 +20 0 -20 -4 0 -6 0 50 -80 -100 + 1 00 5 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 + 80 0 100 50 50 0 0 100 Forward voltage VF Relative intensity(%) 2/2 |
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